InAs/GaP/InGaP high-temperature power Schottky rectifier
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Abstract
An InAs/GaP/InGaP rectifier has been fabricated using a semiconductor-semiconductor Schottky junction to utilize the thermal stability of the semiconductor-semiconductor interface. The InAs/GaP/InGaP system demonstrates rectifying characteristics with an ideality factor of 2.3 and a current-voltage extracted barrier height of 0.96 eV. It exhibits low reverse bias leakage current and achieves breakdown electric field of 0.6 MV/cm. The InAs/GaP/InGaP system maintains the rectifying characteristics up to 600°C. Further improvement of the thermal stability is expected to be achieved by reducing the diffusion of Si dopant atoms across the InAs/GaP interface at high temperature. © 2004 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">InAs/GaP/InGaP high-temperature power Schottky rectifier</title><author><name sortKey="Chen, A" uniqKey="Chen A">A. Chen</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, Yale University, New Haven, Connecticut 06511</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Connecticut</region></placeName><wicri:cityArea>Department of Electrical Engineering, Yale University, New Haven</wicri:cityArea></affiliation></author><author><name sortKey="Woodall, J M" uniqKey="Woodall J">J. M. Woodall</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, Yale University, New Haven, Connecticut 06511</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Connecticut</region></placeName><wicri:cityArea>Department of Electrical Engineering, Yale University, New Haven</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">04-0166682</idno><date when="2004-04-12">2004-04-12</date><idno type="stanalyst">PASCAL 04-0166682 AIP</idno><idno type="RBID">Pascal:04-0166682</idno><idno type="wicri:Area/Main/Corpus">00BB33</idno><idno type="wicri:Area/Main/Repository">00A592</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Arsenic compounds</term><term>Experimental study</term><term>Gallium compounds</term><term>Indium compounds</term><term>Phosphorus compounds</term><term>Rectifiers</term><term>Schottky barriers</term><term>Semiconductor heterojunctions</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7330</term><term>8530H</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium composé</term><term>Arsenic composé</term><term>Phosphore composé</term><term>Barrière Schottky</term><term>Redresseur</term><term>Hétérojonction semiconducteur</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">An InAs/GaP/InGaP rectifier has been fabricated using a semiconductor-semiconductor Schottky junction to utilize the thermal stability of the semiconductor-semiconductor interface. The InAs/GaP/InGaP system demonstrates rectifying characteristics with an ideality factor of 2.3 and a current-voltage extracted barrier height of 0.96 eV. It exhibits low reverse bias leakage current and achieves breakdown electric field of 0.6 MV/cm. The InAs/GaP/InGaP system maintains the rectifying characteristics up to 600°C. Further improvement of the thermal stability is expected to be achieved by reducing the diffusion of Si dopant atoms across the InAs/GaP interface at high temperature. © 2004 American Institute of Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>84</s2></fA05><fA06><s2>15</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>InAs/GaP/InGaP high-temperature power Schottky rectifier</s1></fA08><fA11 i1="01" i2="1"><s1>CHEN (A.)</s1></fA11><fA11 i1="02" i2="1"><s1>WOODALL (J. M.)</s1></fA11><fA14 i1="01"><s1>Department of Electrical Engineering, Yale University, New Haven, Connecticut 06511</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA20><s1>2844-2846</s1></fA20><fA21><s1>2004-04-12</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2004 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>04-0166682</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>An InAs/GaP/InGaP rectifier has been fabricated using a semiconductor-semiconductor Schottky junction to utilize the thermal stability of the semiconductor-semiconductor interface. The InAs/GaP/InGaP system demonstrates rectifying characteristics with an ideality factor of 2.3 and a current-voltage extracted barrier height of 0.96 eV. It exhibits low reverse bias leakage current and achieves breakdown electric field of 0.6 MV/cm. The InAs/GaP/InGaP system maintains the rectifying characteristics up to 600°C. Further improvement of the thermal stability is expected to be achieved by reducing the diffusion of Si dopant atoms across the InAs/GaP interface at high temperature. © 2004 American Institute of Physics.</s0> </fC01><fC02 i1="01" i2="3"><s0>001B70C30</s0></fC02><fC02 i1="02" i2="X"><s0>001D03F01</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>7330</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>8530H</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Arsenic composé</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Arsenic compounds</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Phosphore composé</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Phosphorus compounds</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Barrière Schottky</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Schottky barriers</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Redresseur</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Rectifiers</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Hétérojonction semiconducteur</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Semiconductor heterojunctions</s0></fC03><fN21><s1>110</s1></fN21><fN47 i1="01" i2="1"><s0>0415M000071</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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